PART |
Description |
Maker |
SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
SPI07N60S5 SPP07N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP20N60CFD09 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP20N65C3 SPP20N65C309 SPI20N65C3 SPA20N65C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPP07N60C309 SPA07N60C3 SPI07N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPB07N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPW17N80C3 SPW17N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
|
Infineon Technologies AG
|
SPA20N60CFD09 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
|
Infineon Technologies AG
|
SPP12N50C3 SPP12N50C307 SPA12N50C3 SPI12N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
SPI08N50C3 SPP08N50C3 SPA08N50C3 SPP08N50C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
IPB60R120C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
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